Large-scale quantum-emitter arrays in atomically thin semiconductors

Abstract

Quantum light emitters have been observed in atomically thin layers of transition metal dichalcogenides. However, they are found at random locations within the host material and usually in low densities, hindering experiments aiming to investigate this new class of emitters. Here, we create deterministic arrays of hundreds of quantum emitters in tungsten diselenide and tungsten disulphide monolayers, emitting across a range of wavelengths in the visible spectrum (610–680 nm and 740–820 nm), with a greater spectral stability than their randomly occurring counterparts. This is achieved by depositing monolayers onto silica substrates nanopatterned with arrays of 150-nm-diameter pillars ranging from 60 to 190 nm in height. The nanopillars create localized deformations in the material resulting in the quantum confinement of excitons. Our method may enable the placement of emitters in photonic structures such as optical waveguides in a scalable way, where precise and accurate positioning is paramount.

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Cited by papers we hold 6

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• Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K · 2021
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• Enabling remote quantum emission in 2D semiconductors via porous metallic networks · 2020
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• Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications · 2020
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• Charge-tuneable biexciton complexes in monolayer WSe2 · 2018
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• Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride · 2017
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