Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

Abstract

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe 2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions.

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Cited by papers we hold 5

• Defect and strain engineering of monolayer WSe2 enables site-controlled single-photon emission up to 150 K · 2021
  No notice
• Enabling remote quantum emission in 2D semiconductors via porous metallic networks · 2020
  Not checked
• Strain engineering of 2D semiconductors and graphene: from strain fields to band-structure tuning and photonic applications · 2020
  No notice
• Charge-tuneable biexciton complexes in monolayer WSe2 · 2018
  No notice
• Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride · 2017
  No notice

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