Morphology and Structure Properties of Boron-doped Diamond Films Prepared by Hot Cathode Direct Current Plasma Chemical Vapor Deposition

<p>Boron-doped diamond (BDD) films were deposited by hot cathode direct current plasma chemical vapor deposition (HCDC-PCVD) according to various mixture ratios of CH₄/H₂/B(OCH₃)₃ gas. The Raman performances and surface morphologies of the BDD films were then characterized by Raman spectroscopy and scanning electron microscopy (SEM). Results indicated that the flow rate of B(OCH₃)₃ had marked effects on the growth characteristics of the produced boron-doped diamond films. The presence and concentration of the doped boron atoms significantly altered both the surface morphologies and structures of the diamond films. With increasing flow rate of B(OCH₃)₃, the crystal grain surfaces became smooth as visible under SEM. The B-doping levels in these films increased from 1.75×10¹⁹cm^-3 to a maximum of 2.4×10²¹cm^-3, estimated from the Raman spectra.</p><p> </p><p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.22.2.12923">http://dx.doi.org/10.5755/j01.ms.22.2.12923</a></p>

Abstract licence: CC BY

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