Tuning the Polarity of MoTe 2 FETs by Varying the Channel Thickness for Gas-Sensing Applications
Asha Rani, Kyle DiCamillo, Md Ashfaque Hossain Khan and 2 more
Sensors · 2019
doi:10.3390/s19112551 (opens in a new tab)
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Abstract
In this study, electrical characteristics of MoTe<sub>2</sub> field-effect transistors (FETs) are investigated as a function of channel thickness. The conductivity type in FETs, fabricated from exfoliated MoTe<sub>2</sub> crystals, switched from p-type to ambipolar to n-type conduction with increasing MoTe<sub>2</sub> channel thickness from 10.6 nm to 56.7 nm. This change in flake-thickness-dependent conducting behavior of MoTe<sub>2</sub> FETs can be attributed to modulation of the Schottky barrier height and related bandgap alignment. Change in polarity as a function of channel thickness variation is also used for ammonia (NH<sub>3</sub>) sensing, which confirms the p- and n-type behavior of MoTe<sub>2</sub> devices.
Abstract licence: CC BY
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