Multi-Level Cell Properties of a Bilayer Cu 2 O/Al 2 O 3 Resistive Switching Device
Jonas Deuermeier, Asal Kiazadeh, Andreas Klein and 2 more
Nanomaterials · 2019
doi:10.3390/nano9020289 (opens in a new tab)
We email you when a new notice or a question about this paper appears.
Abstract
Multi-level resistive switching characteristics of a Cu<sub>2</sub>O/Al<sub>2</sub>O<sub>3</sub> bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide—an unusual property for an oxide semiconductor—are discussed for the first time regarding their role in the resistive switching mechanism.
Abstract licence: CC BY
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.