Etching of Uncompensated Convex Corners with Sides along <n10> and <100> in 25 wt% TMAH at 80 °C

This paper presents etching of convex corners with sides along &lt;n10&gt; and &lt;100&gt; crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 &#176;C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along &lt;n10&gt; and &lt;100&gt; crystallographic directions (1 &lt; n &lt; 8). The acute corners of islands in the masking layer formed by &lt;n10&gt; and &lt;100&gt; crystallographic directions were smaller than 45&#176;. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n &gt; 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions &lt;310&gt; and &lt;100&gt; as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.

Abstract licence: CC BY

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