An Improved 4H-SiC MESFET with a Partially Low Doped Channel

An improved 4H-SiC metal semiconductor field effect transistor (MESFET) based on the double-recessed MESFET (DR-MESFET) for high power added efficiency (PAE) is designed and simulated in this paper and its mechanism is explored by co-simulation of ADS and ISE-TCAD software. This structure has a partially low doped channel (PLDC) under the gate, which increases the PAE of the device by decreasing the absolute value of the threshold voltage (<i>V</i>_t), gate-source capacitance (<i>C</i>_gs) and saturation current (<i>I</i>_d). The simulated results show that with the increase of <i>H</i>, the PAE of the device increases and then decreases when the value of <i>N</i>_PLDC is low enough. The doping concentration and thickness of the PLDC are respectively optimized to be <i>N</i>_PLDC = 1 &#215; 10¹⁵ cm^&#8722;3 and <i>H</i> = 0.15 &#956;m to obtain the best PAE. The maximum PAE obtained from the PLDC-MESFET is 43.67%, while the PAE of the DR-MESFET is 23.43%; the optimized PAE is increased by 86.38%.

Abstract licence: CC BY

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