Single crystals of bismuth silicon oxide grown by the czochralski technique and their characterisation
Golubović Aleksandar, Nikolić Slobodanka, Gajić Radoš and 2 more
Journal of the Serbian Chemical Society · 1999
doi:10.2298/jsc9909553g (opens in a new tab)
We email you when a new notice or a question about this paper appears.
Abstract
Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. The optical properties of the bismuth silicon oxide single crystals were investigated. The obtained results are discussed and compared with published data.
Abstract licence: CC BY-NC-ND
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.