Perspective Method of Betavoltaic Converter Creation
K.V. Rudenko, A.V. Miakonkih, A.E. Rogojin and 4 more
Журнал нано- та електронної фізики · 2016
doi:10.21272/jnep.8(2).02022 (opens in a new tab)
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Abstract
Some results on planar diode structure creation by the method of a plasma-immersion ion implantation is presented in this paper. Obtained leakage current ~ 1 uA/cm2 at reverse voltage – 1 V. The cryogenic plasmochemical silicon etching process is developed, able to form the structured silicon layer with system of deep holes with high aspect ratio.
Abstract licence: CC BY
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