Phase Diagram of the Sn–As–Ge System

The paper presents the phase diagram of the Sn-As-Ge system. The diagram of polythermal Sn-GeAs section was constructed using the results of X-ray powder diffraction analysis and differential thermal analysis. We found that in a concentration interval with arsenic content of less than 50 mol%, four-phase peritectic equilibria L + SnAs ∆ GeAs + Sn4As3 (834 ∆) and L + GeAs ∆ Ge + Sn4As3 (821 ∆) are present. When the temperature is close to the melting point of pure tin, non-variant equilibrium with tin, germanium and Sn4As3 is implemented as well. The study of Sn0.39As0.61-Ge0.28As0.72, SnAs-Ge0.4As0.6 and SnAs-GeAs2 sections and elaboration of the type of the SnAs-GeAs phase diagram demonstrated that polythermal sections SnAs-GeAs and SnAs-GeAs2 can perform phase subsolidus demarcation of the phase diagram of the Sn-As-Ge system. There are also invariant peritectic equilibria L + GeAs2 ∆ GeAs + SnAs (840 ∆) and L + As ∆ SnAs + GeAs2 (843 ∆) in the system.

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