Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material
Byeong-Seon An
Applied Microscopy · 2019
doi:10.1186/s42649-019-0021-5 (opens in a new tab)
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Abstract
The crystallization of amorphous Ge 2 Sb 2 Te 5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge 2 Sb 2 Te 5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.
Abstract licence: CC BY
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