Dielectric tunable characteristics of compositional-gradient BaTi1−xSnxO3 thin films

Compositional-gradient BaTi1−xSnxO3 thin films on Pt(100)/Ti/SiO2/Si substrates are fabricated with sol–gel using spin coating. All of the structures of the prepared thin films are of single-phase crystalline perovskite with a dense and crack-free surface morphology. BTS10/15/20 thin film exhibits enhanced temperature stability in its dielectric behavior. The temperature coefficient of capacitance TCC20−150 in the temperature range from 20∘C to 150∘C is − 0.9 × 10−4/∘C and that of TCC20−(−95) in the temperature range from 20∘C to − 95∘C is − 3.8 × 10−4/∘C. Furthermore, the thin films show low leakage current density and dielectric loss. High and stable dielectric tunable performances are found in BTS10/15/20 thin films: the dielectric tunability of the thin films is around 20.1% under a bias voltage of 8 V at 1 MHz and the corresponding dielectric constant is in the range between 89 and 111, which is beneficial for impedance matching in circuits. Dielectric tunability can be obtained under a low tuning voltage, which helps ensure safety. The simulated resonant frequency of the compositional-gradient BTS thin films depends on the bias electric field, showing compositional-gradient BTS thin films could be used in electrically tunable components and devices. These properties make compositional-gradient BTS thin films a promising candidate for dielectric tuning.

Abstract licence: CC BY-NC

A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.