An InGaAs/AlAsSb Avalanche Photodiode With a Small Temperature Coefficient of Breakdown
Jingjing Xie, Jo Shien Ng, Chee Hing Tan
IEEE Photonics Journal · 2013
doi:10.1109/jphot.2013.2272776 (opens in a new tab)
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Abstract
Dark current and avalanche gain M on AlAs<sub>0.56</sub>Sb<sub>0.44</sub> (hereafter referred to as AlAsSb) separate absorption multiplication (SAM) avalanche photodiodes (APDs) were measured at temperatures ranging from 77 K to 300 K. To avoid possible ambiguity in breakdown voltage due to edge breakdown and tunneling current, a phase-sensitive detection method with a tightly focused light spot in the center of the device was employed to measure M accurately. An extrapolation of 1/M to zero was used to deduce the breakdown voltage, from which the temperature coefficient of breakdown voltage Cbd was derived. The value of C<sub>bd</sub> 1/4 8 mV/K, obtained for AlAsSb SAM APDs, is much smaller than that for commercial Si and InGaAs/InP APDs, as well as other SAM APDs in the literature, demonstrating the potential of AlAsSb avalanche regions in improving the thermal stability of APDs.
Abstract licence: CC BY-NC-ND
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