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Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Wataru Saito, Shin-Ichi Nishizawa

IEEE Journal of the Electron Devices Society · 2022

doi:10.1109/jeds.2022.3187151 (opens in a new tab)

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Abstract

A new parameter optimization method using zoomed response surface (RS) is proposed for automatic design of low-voltage power MOSFET. Low-voltage MOSFET characteristics have been improved continuously considering with not only low power loss but also low cost to answer request to high-performance system. Complicated requirements lead long development schedule and low yield. Model-based design and machine learning are prospective method to answer the problem. However, reported methods require many simulation numbers (>1000) for training to obtain high accuracy, and it is difficult to optimize parameters considering the process margin at the same time. This article shows a simple design method using zoomed RS. Five parameters were automatically designed, taking account to process margin with simulation number of 130 only.

Abstract licence: CC BY-NC-ND

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