Ultra-Fast (ns-Scale) Characterization of NBTI Behaviors in Si pFinFETs
Xiao Yu, Jiwu Lu, Wei Liu and 2 more
IEEE Journal of the Electron Devices Society · 2020
doi:10.1109/jeds.2020.2989413 (opens in a new tab)
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Abstract
In this paper, NBTI behaviors of Si pFinFETs are characterized with the measurement time down to ns-scale utilizing the fast V<sub>th</sub> measurement (FVM) technique. It is found that the NBTI behaviors in terms of V<sub>th</sub> shift is strongly influenced by the measurement speed even in the nano-second scale (ns-scale). The measurement phase itself during the NBTI characterization could bring in an additional V<sub>th</sub> shift (ΔV<sub>th</sub>) or ΔV<sub>th</sub> recovery. From the ns-scale characterization results in different stress and temperature, it is shown that the rapid recoverable components of NBTI should be attributable to the rapid hole trapping/detrapping, which are related to the defects with time constants of ns-scale.
Abstract licence: CC BY-NC-ND
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