Al 2 O 3 -Dielectric InAlN/AlN/GaN <inline-formula> <tex-math notation="LaTeX">${\Gamma}$ </tex-math></inline-formula>-Gate MOS-HFETs With Composite Al 2 O 3 /TiO 2 Passivation Oxides
Ching-Sung Lee, Xue-Cheng Yao, Yi-Ping Huang and 1 more
IEEE Journal of the Electron Devices Society · 2018
doi:10.1109/jeds.2018.2870844 (opens in a new tab)
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