Design of a Wideband CMOS Balun and Its Application in a Wideband RF Front-End
Tongxuan Zhou, Ge-Liang Yang, Rui Chen and 2 more
IEEE Access · 2021
doi:10.1109/access.2021.3093508 (opens in a new tab)
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Abstract
This paper presents a 1:2 wideband CMOS balun, and its application for sub-6 GHz wideband front-end. In order to eliminate the amplitude/phase mismatch, the primary and secondary windings are shorted by a transmission line (T-line) for a common ground. The float metal in the primary winding is used for artificial dielectric compensation which further reduce the amplitude imbalance by up to about 0.5 dB. A 2.0-to-3.7 GHz wideband RF front-end is also designed by using the proposed CMOS balun. The balun and RF front-end are fabricated in a 0.13-<inline-formula> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> bulk CMOS technology. The bandwidth of the balun with <inline-formula> <tex-math notation="LaTeX">$\vert \text {S}11\vert < {-}10$ </tex-math></inline-formula> dB is 2.2-to-5.1 GHz. The fractional bandwidth is large than 79.5%. The corresponding maximum amplitude and phase mismatch is 1.5 dB and 2°, respectively. The measured insertion loss is 4.8-to-5.6 dB from 2.2 to 5.1 GHz.
Abstract licence: CC BY-NC-ND
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