998 Multiplication Rate of GaAs Avalanche Semiconductor Switch Triggered by 0.567 nJ
Cheng Ma, Wei Shi, Chengang Dong and 6 more
IEEE Access · 2020
doi:10.1109/access.2020.3004054 (opens in a new tab)
We email you when a new notice or a question about this paper appears.
Abstract
In this paper, the results show that the avalanche mode of GaAs photoconductive semiconductor switches (PCSS) requires only a low trigger optical energy of 0.567 nJ to achieve. At the bias electric field is 94 kV/cm, a trigger optical energy with sub-Nano Joule is used to trigger the PCSS, and the multiplication rate can be as high as 988. We have presented avalanche delay characteristics under the different bias electric voltage, and the physical mechanism of the avalanche delay time is analyzed. This article shows a high multiplication rate ultrafast pulse source with low-energy triggering.
Abstract licence: CC BY-NC-ND
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.