Phase-change controlled spin–orbit torque magnetic tunnel junction for in-memory sensing and computing

We present a device integrated thermal and optical induced phase change materials vanadium dioxide and spin–orbit torque magnetic tunnel junction. This device showcases the ability to perform in-memory sensing and computing under thermal and optical stimulus, manifesting multiple logic functions in response to different input signals. Furthermore, a circuit simulation model based on the experimental results is built, which can implement 16 types of reconfigurable Boolean logic gates. On this basis, a 1 kb half-adder Magnetoresistive Random Access Memory (MRAM) array is constructed that significantly enhancing the computational throughput.

Abstract licence: CC BY

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