PbSnSe/PbSrSe quantum well materials for thermophotovoltaic devices

Multiple quantum well (MQW) materials composed of Pb0.81Sn0.19Se wells and Pb0.80Sr0.20Se barriers with intersubband energy gaps of 343 meV and 450 meV were modeled for thermophotovoltaic (TPV) device performance. The effect of L-valley degeneracy removal in these (111)-oriented IV-VI semiconductor quantum wells was evaluated. Degeneracy splitting reduces the effective densities of states in both the valence and conduction bands. Thermally generated intrinsic charge carrier concentrations are smaller by a factor of three as compared to bulk materials with the same bandgap energies. A current-matched dual junction TPV cell made from these MQW materials in a generator with a 1215°C radiator is predicted to have a power density of 2.34 W/cm2, 49% better than the power density generated by a cell made from bulk materials with the same bandgap energies.

Abstract licence: CC BY

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