Experimental characterization of true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure
Q.-N. Yu, Y. Jia, W. Lu and 6 more
AIP Advances · 2017
doi:10.1063/1.4990630 (opens in a new tab)
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Abstract
In this paper, an experimental approach to acquiring true spontaneous emission rate of optically-pumped InGaAs/GaAs quantum-well laser structure is described. This method is based on a single edge-emitting laser chip with simple sample processing. The photoluminescence spectra are measured at both facets of the edge-emitting device and transformed to the spontaneous emission rate following the theory described here. The unusual double peaks appearing in the spontaneous emission rate spectra are observed for the InGaAs/GaAs quantum-well structure. The result is analyzed in terms of Indium-rich island and Model-Solid theories. The proposed method is suitable for electrically-pumped quantum-well laser structures, as well.
Abstract licence: CC BY
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