In-situ NC-AFM measurements of high quality AlN(0001) layers grown at low growth rate on 4H-SiC(0001) and Si(111) substrates using ammonia molecular beam epitaxy
Florian Chaumeton, Sébastien Gauthier, David Martrou
AIP Advances · 2015
doi:10.1063/1.4922193 (opens in a new tab)
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