Size effect in the electronic transport of thin films of Bi2Se3
Marchenkov V.V., Chistyakov V.V., Huang J.C.A. and 3 more
EPJ Web of Conferences · 2018
doi:10.1051/epjconf/201818501002 (opens in a new tab)
We email you when a new notice or a question about this paper appears.
Abstract
Thin films of a topological insulator (TI) Bi2Se3 of various thicknesses from 20 nm to 75 nm were obtained. The resistivity measurements were carried out according to the conventional 4-contact DC technique. This allows to “separate” the bulk and surface conductivities at different temperatures and magnetic fields. It was suggested that similar effects should be observed in other TIs and systems with inhomogeneous distribution of dc-current on sample cross section.
Abstract licence: CC BY
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.