Thermal scanning probe lithography using Parylene C as thermal resist

Abstract Thermal scanning probe lithography is a direct‐write patterning method that uses a heated scanning probe tip to remove thermal resist. The most widely used thermal resist is polyphthalaldehyde. Another alternative thermal resist, Parylene C is introduced in this letter. It has been found that Parylene C has a wide process latitude as a thermal resist under our experimental conditions. A high resolution of ∼40 nm can be achieved in our optimised process. In addition, patterns in parylene layer can be transferred directly into the substrate with deep reactive ion etching without an additional hard mask, thus simplifying the fabrication process.

Abstract licence: CC BY-ND

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