Toward air-stable multilayer phosphorene thin-films and transistors

Abstract

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ideal for optoelectronics and flexible devices. However, its instability in air is of paramount concern for practical applications. Here, we demonstrate air-stable BP devices with dielectric and hydrophobic encapsulation. Microscopy, spectroscopy and transport techniques were employed to elucidate the aging mechanism, which can initiate from the BP surface for bare samples, or edges for samples with thin dielectric coating, highlighting the ineffectiveness of conventional scaled dielectrics. Our months-long studies indicate that a double layer capping of Al 2 O 3 and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.

Full text

Its licence does not allow us to show the full text. Read it at PubMed Central:

References 50

1. 1.

   Bridgman P. W. Two New Modifications of Phosphorus. J. Am. Chem. Soc. 36, 1344–1363, (1914 ).

   Not in our library10.1021/ja02184a002

2. 2.

   Morita A. Semiconducting black phosphorus. Appl. Phys. A 39, 227–242, (1986 ).

   Not in our library10.1007/bf00617267

3. 3.

   Li L. et al. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377, (2014 ).

   Not in our library10.1038/nnano.2014.35

4. 4.

   Liu H. et al. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041, (2014 ).

   Not in our library10.1021/nn501226z

5. 5.

   Liu H., Du Y., Deng Y. & Ye P. D. Semiconducting black phosphorus: synthesis, transport properties and electronic applications. Chem. Soc. Rev., (2014 ).

   Not in our library10.1039/c4cs00257a

6. 6.

   Tran V., Soklaski R., Liang Y. & Yang L. Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus. Phys. Rev. B 89, 235319 (2014 ).

   Not in our library

7. 7.

   Schwierz F. Graphene Transistors: Status, Prospects, and Problems. Proc. IEEE 101, 1567–1584 (2013 ).

   Not in our library

8. 8.

   Wong H.-S. P. & Akinwande D. Carbon Nanotube and Graphene Device Physics. (Cambridge Univ Press, 2011 ).

   Not in our library

9. 9.

   Wang Q. H., Kalantar-Zadeh K., Kis A., Coleman J. N. & Strano M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712, (2012 ).

   Not in our library10.1038/nnano.2012.193

10. 10.

    Chhowalla M. et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 5, 263–275, (2013 ).

    Not in our library10.1038/nchem.1589

11. 11.

    Engel M., Steiner M. & Avouris P. Black Phosphorus Photodetector for Multispectral, High-Resolution Imaging. Nano lett. 14, 6414–6417, (2014 ).

    Not in our library10.1021/nl502928y

12. 12.

    Buscema M. et al. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors. Nano Lett. 14, 3347–3352, (2014 ).

    Not in our library10.1021/nl5008085

13. 13.

    Andres C.-G. et al. Isolation and characterization of few-layer black phosphorus. 2D Mater. 1, 025001 (2014 ).

    Not in our library

14. 14.

    Island J. O., Steele G. A., van der Zant H. S. & Castellanos-Gomez A. Environmental instability of few-layer black phosphorus. 2D Mater. 2, 011002, (2015 ).

    Not in our library10.1088/2053-1583/2/1/011002

15. 15.

    Koenig S. P., Doganov R. A., Schmidt H., Castro Neto A. H. & Özyilmaz B. Electric field effect in ultrathin black phosphorus. Appl. Phys. Lett. 104, 103106, (2014 ).

    Not in our library10.1063/1.4868132

16. 16.

    Wood J. D. et al. Effective Passivation of Exfoliated Black Phosphorus Transistors against Ambient Degradation. Nano Lett. 14, 6964–6970, (2014 ).

    Not in our library10.1021/nl5032293

17. 17.

    Favron A. et al. Exfoliating black phosphorus down to the monolayer: photo-induced oxidation and electronic confinement effects. arXiv preprint arXiv:1408.0345 (2014 ).

    Not in our library

18. 18.

    Silverstein M. S., Nordblom G. F., Dittrich C. W. & Jakabcin J. J. Stable Red Phosphorus. Ind. Eng. Chem. 40, 301–303, (1948 ).

    Not in our library10.1021/ie50458a024

19. 19.

    Lee J. et al. 25 GHz embedded-gate graphene transistors with high-k dielectrics on extremely flexible plastic sheets. ACS Nano 7, 7744–7750, (2013 ).

    Not in our library10.1021/nn403487y

20. 20.

    Chang H. Y. et al. High-performance, highly bendable MoS2 transistors with high-k dielectrics for flexible low-power systems. ACS Nano 7, 5446–5452, (2013 ).

    Not in our library10.1021/nn401429w

21. 21.

    Ramon M. et al. 3 GHz Graphene Frequency Doubler on Quartz Operating Beyond the Transit Frequency. IEEE Trans. Nanotechnol. 11, 877–883 (2012 ).

    Not in our library10.1109/tnano.2012.2203826

22. 22.

    Rahimi S. et al. Toward 300 mm wafer-scalable high-performance polycrystalline chemical vapor deposited graphene transistors. ACS Nano 8, 10471–10479, (2014 ).

    Not in our library10.1021/nn5038493

23. 23.

    Akinwande D., Petrone N. & Hone J. Two-dimensional flexible nanoelectronics. Nat. Commun. 5, 5678, (2014 ).

    Not in our library10.1038/ncomms6678

24. 24.

    Das S., Demarteau M. & Roelofs A. Ambipolar phosphorene field effect transistor. ACS Nano 8, 11730–11738, (2014 ).

    Not in our library10.1021/nn505868h

25. 25.

    Liu H., Neal A. T., Si M., Du Y. & Ye P. D. The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights. IEEE Electron Device Lett. 35, 795–797, (2014 ).

    Not in our library10.1109/led.2014.2323951

26. 26.

    Liu H., Neal A. T. & Ye P. D. Ambipolar phosphorene field-effect transistors with dielectric capping. Device Research Conference (DRC) 4133, 201–202 (2014 ).

    Not in our library

27. 27.

    Na J. et al. Few-layer black phosphorus field-effect transistors with reduced current fluctuation. ACS Nano 8, 11753–11762, (2014 ).

    Not in our library10.1021/nn5052376

28. 28.

    Luo X., Rahbarihagh Y., Hwang J. & Liu H. Temporal and Thermal Stability of Al2O3-passivated Phosphorene MOSFETs. IEEE Electron Device Lett. 35, 1314–1316 (2014 ).

    Not in our library

29. 29.

    Wong E. H., Rajoo R., Koh S. W. & Lim T. B. The Mechanics and Impact of Hygroscopic Swelling of Polymeric Materials in Electronic Packaging. J. Electron Packaging 124, 122–126, (2002 ).

    Not in our library10.1115/1.1461367

30. 30.

    Ziletti A., Carvalho A., Campbell D. K., Coker D. F. & Neto A. C. Oxygen Defects in Phosphorene. Phys. Rev. Lett. 114, 046801, (2014 ).

    Not in our library10.1103/physrevlett.114.046801

31. 31.

    Rudolph W. W. Raman-and infrared-spectroscopic investigations of dilute aqueous phosphoric acid solutions. Dalton Trans. 39, 9642–9653 (2010 ).

    Not in our library10.1039/c0dt00417k

32. 32.

    Venkateswaran C. in Proc. Indian. Acad. Sci. A. 25–30 (Indian Academy of Sciences, 1935 ).

    Not in our library

33. 33.

    Carbonnière P. & Pouchan C. Vibrational spectra for P4O6 and P4O10 systems: Theoretical study from DFT quartic potential and mixed perturbation-variation method. Chem. Phys. Lett. 462, 169–172, (2008 ).

    Not in our library10.1016/j.cplett.2008.07.056

34. 34.

    Hanwick T. J. & Hoffmann P. O. Raman Spectra of Several Compounds Containing Phosphorus. J. Chem. Phys. 19, 708, (1951 ).

    Not in our library10.1063/1.1748337

35. 35.

    Fee D. C., Gard D. R. & Yang C.-H. in Kirk-Othmer Encyclopedia of Chemical Technology (John Wiley & Sons, Inc., 2000 ).

    Not in our library

36. 36.

    Kim S. et al. Realization of a high mobility dual-gated graphene field-effect transistor with Al[sub 2]O[sub 3] dielectric. Appl. Phys. Lett. 94, 062107, (2009 ).

    Not in our library10.1063/1.3077021

37. 37.

    Lam K.-T., Dong Z. & Guo J. Performance Limits Projection of Black Phosphorous Field-Effect Transistors. IEEE Electron Device Lett. 35, 963–965, (2014 ).

    Not in our library10.1109/led.2014.2333368

38. 38.

    Lai K., Kundhikanjana W., Kelly M. A. & Shen Z.-X. Nanoscale microwave microscopy using shielded cantilever probes. Appl. Nanosci. 1, 13–18, (2011 ).

    Not in our library10.1007/s13204-011-0002-7

39. 39.

    Yang Y. et al. Batch-fabricated cantilever probes with electrical shielding for nanoscale dielectric and conductivity imaging. J. Micromech. Microeng. 22, 115040 (2012 ).

    Not in our library

40. 40.

    Liu Y. et al. Mesoscale imperfections in MoS2 atomic layers grown by a vapor transport technique. Nano Lett. 14, 4682–4686, (2014 ).

    Not in our library10.1021/nl501782e

41. 41.

    Lai K., Kundhikanjana W., Kelly M. & Shen Z. X. Modeling and characterization of a cantilever-based near-field scanning microwave impedance microscope. Rev. Sci. Instrum. 79, 063703, (2008 ).

    Not in our library10.1063/1.2949109

42. 42.

    Duclaux L. Review of the doping of carbon nanotubes (multiwalled and single-walled). Carbon 40, 1751–1764, (2002 ).

    Not in our library10.1016/s0008-6223(02)00043-x

43. 43.

    Ferrari A. C. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 97, 187401 (2006 ).

    Not in our library10.1103/physrevlett.97.187401

44. 44.

    Tao L. et al. Synthesis of high quality monolayer graphene at reduced temperature on hydrogen-enriched evaporated copper (111) films. ACS Nano 6, 2319–2325, (2012 ).

    Not in our library10.1021/nn205068n

45. 45.

    Javey A. et al. Carbon nanotube field-effect transistors with integrated ohmic contacts and high- kappa gate dielectrics. Nano Lett. 4, 447–450 (2004 ).

    Not in our library

46. 46.

    Ha T.-J., Lee J., Akinwande D. & Dodabalapur A. The Restorative Effect of Fluoropolymer Coating on Electrical Characteristics of Graphene Field-Effect Transistors. IEEE Electron Device Lett. 34, 559–561, (2013 ).

    Not in our library10.1109/led.2013.2246537

47. 47.

    Ha T. J. et al. Transformation of the electrical characteristics of graphene field-effect transistors with fluoropolymer. ACS Appl. Mater. Interfaces 5, 16–20, (2013 ).

    Not in our library10.1021/am3025323

48. 48.

    Yang M. K., French R. H. & Tokarsky E. W. Optical properties of Teflon® AF amorphous fluoropolymers. J Micro Nanolithogr MEMS MOEMS 7, 033010-033010-033019, (2008 ).

    Not in our library10.1117/1.2965541

49. 49.

    Han S. J. et al. High-frequency graphene voltage amplifier. Nano Lett. 11, 3690–3693, (2011 ).

    Not in our library10.1021/nl2016637

50. 50.

    Lowry J. H., Mendlowitz J. S. & Subramanian N. S. Optical characteristics of Teflon AF fluoroplastic materials. Opt. Eng. 31, 1982–1985, (1992 ).

    Not in our library10.1117/12.59910

Cited by papers we hold 2

• Insulators for 2D nanoelectronics: the gap to bridge · 2020
  No notice
• Producing air-stable monolayers of phosphorene and their defect engineering · 2016
  No notice

Reads

A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.