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Purely in-plane ferroelectricity in monolayer SnS at room temperature
Naoki Higashitarumizu, Hayami Kawamoto, Chien-Ju Lee and 7 more
Nature Communications · 2020 · CC BY
doi:10.1038/s41467-020-16291-9
Abstract
2D van der Waals ferroelectrics have emerged as an attractive building block with immense potential to provide multifunctionality in nanoelectronics. Although several accomplishments have been reported in ferroelectric switching for out-of-plane ferroelectrics down to the monolayer, a purely in-plane ferroelectric has not been experimentally validated at the monolayer thickness. Herein, an in-plane ferroelectricity is demonstrated for micrometer-size monolayer SnS at room temperature. SnS has been commonly regarded to exhibit the odd–even effect, where the centrosymmetry breaks only in the odd-number layers to exhibit ferroelectricity. Remarkably, however, a robust room temperature ferroelectricity exists in SnS below a critical thickness of 15 layers with both an odd and even number of layers, suggesting the possibility of controlling the stacking sequence of multilayer SnS beyond the limit of ferroelectricity in the monolayer. This work will pave the way for nanoscale ferroelectric applications based on SnS as a platform for in-plane ferroelectrics.
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Read at PubMed CentralReferences 59
- 1.
Lee SR, et al. First Observation of ferroelectricity in ~1 nm ultrathin semiconducting BaTiO3 films. Nano Lett. 2019;19:2243-2250.
Not in our library10.1021/acs.nanolett.8b04326
- 2.
Ji D, et al. Freestanding crystalline oxide perovskites down to the monolayer limit. Nature. 2019;570:87-90.
Not in our library10.1038/s41586-019-1255-7
- 3.
Fong DD, et al. Ferroelectricity in ultrathin perovskite films. Science. 2004;304:1650-1653.
Not in our library10.1126/science.1098252
- 4.
Mehta RR, Silverman BD, Jacobs JT. Depolarization fields in thin ferroelectric films. J. Appl. Phys. 1973;44:3379-3385.
Not in our library10.1063/1.1662770
- 5.
Junquera J, Ghosez P. Critical thickness for ferroelectricity in perovskite ultrathin films. Nature. 2003;422:506-509.
Not in our library10.1038/nature01501
- 6.
Stengel M, Spaldin NA. Origin of the dielectric dead layer in nanoscale capacitors. Nature. 2006;443:679-682.
Not in our library10.1038/nature05148
- 7.
- 8.
Fei Z, et al. Ferroelectric switching of a two-dimensional metal. Nature. 2018;560:336-339.
Not in our library10.1038/s41586-018-0336-3
- 9.
You L, et al. Origin of giant negative piezoelectricity in a layered van der Waals ferroelectric. Sci. Adv. 2019;5:eaav3780.
Not in our library10.1126/sciadv.aav3780
- 10.
Zhou Y, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett. 2017;17:5508-5513.
Not in our library10.1021/acs.nanolett.7b02198
- 11.
Zheng C, et al. Room temperature in-plane ferroelectricity in van der Waals In2Se3. Sci. Adv. 2018;4:eaar7720.
Not in our library10.1126/sciadv.aar7720
- 12.
Xiao J, et al. Intrinsic two-dimensional ferroelectricity with dipole locking. Phys. Rev. Lett. 2018;120:227601.
Not in our library10.1103/physrevlett.120.227601
- 13.
Cui C, et al. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3. Nano Lett. 2018;18:1253-1258.
Not in our library10.1021/acs.nanolett.7b04852
- 14.
Xue F, et al. Room-temperature ferroelectricity in hexagonally layered α-In2Se3 nanoflakes down to the monolayer limit. Adv. Funct. Mater. 2018;28:1803738.
Not in our library10.1002/adfm.201803738
- 15.
Chang K, et al. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science. 2016;353:274-278.
Not in our library10.1126/science.aad8609
- 16.
- 17.
Si M, Liao P-Y, Qiu G, Duan Y, Ye PD. Ferroelectric field-effect transistors based on MoS2 and CuInP2S6 two-dimensional van der Waals heterostructure. ACS Nano. 2018;12:6700-6705.
Not in our library10.1021/acsnano.8b01810
- 18.
Xue F, et al. Gate-tunable and multidirection-switchable memristive phenomena in a van der Waals ferroelectric. Adv. Mater. 2019;1901300:1901300.
Not in our library10.1002/adma.201901300
- 19.
Wan S, et al. Room-temperature ferroelectricity and a switchable diode effect in two-dimensional α-In2Se3 thin layers. Nanoscale. 2018;10:14885-14892.
Not in our library10.1039/c8nr04422h
- 20.
Belianinov A, et al. CuInP2S6 room temperature layered ferroelectric. Nano Lett. 2015;15:3808-3814.
Not in our library10.1021/acs.nanolett.5b00491
- 21.
Xue F, et al. Multidirection piezoelectricity in mono- and multilayered hexagonal α-In2Se3. ACS Nano. 2018;12:4976-4983.
Not in our library10.1021/acsnano.8b02152
- 22.
Wu M, Zeng XC. Intrinsic ferroelasticity and/or multiferroicity in two-dimensional phosphorene and phosphorene analogues. Nano Lett. 2016;16:3236-3241.
Not in our library10.1021/acs.nanolett.6b00726
- 23.
Wang H, Qian X. Two-dimensional multiferroics in monolayer group IV monochalcogenides. 2D Mater. 2017;4:015042.
Not in our library10.1088/2053-1583/4/1/015042
- 24.
Hanakata PZ, Carvalho A, Campbell DK, Park HS. Polarization and valley switching in monolayer group-IV monochalcogenides. Phys. Rev. B. 2016;94:035304.
Not in our library10.1103/physrevb.94.035304
- 25.
Barraza-Lopez S, Kaloni TP, Poudel SP, Kumar P. Tuning the ferroelectric-to-paraelectric transition temperature and dipole orientation of group-IV monochalcogenide monolayers. Phys. Rev. B. 2018;97:024110.
Not in our library10.1103/physrevb.97.024110
- 26.
Lebedev AI. Ferroelectricity and piezoelectricity in monolayers and nanoplatelets of SnS. J. Appl. Phys. 2018;124:164302.
Not in our library10.1063/1.5035419
- 27.
Fei R, Kang W, Yang L. Ferroelectricity and phase transitions in monolayer group-IV monochalcogenides. Phys. Rev. Lett. 2016;117:097601.
Not in our library10.1103/physrevlett.117.097601
- 28.
Fei R, Li W, Li J, Yang L. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS. Appl. Phys. Lett. 2015;107:173104.
Not in our library10.1063/1.4934750
- 29.
Duerloo K-AN, Ong MT, Reed EJ. Intrinsic piezoelectricity in two-dimensional materials. J. Phys. Chem. Lett. 2012;3:2871-2876.
Not in our library10.1021/jz3012436
- 30.
Higashitarumizu N, Kawamoto H, Ueno K, Nagashio K. Fabrication and surface engineering of two-dimensional SnS toward piezoelectric nanogenerator application. MRS Adv. 2018;3:2809-2814.
Not in our library10.1557/adv.2018.404
- 31.
Guo Y, Zhou S, Bai Y, Zhao J. Oxidation resistance of monolayer group-IV monochalcogenides. ACS Appl. Mater. Interfaces. 2017;9:12013-12020.
Not in our library10.1021/acsami.6b16786
- 32.
Bao Y, et al. Gate-tunable in-plane ferroelectricity in few-layer SnS. Nano Lett. 2019;19:5109-5117.
Not in our library10.1021/acs.nanolett.9b01419
- 33.
Tian Z, Guo C, Zhao M, Li R, Xue J. Two-dimensional SnS: a phosphorene analogue with strong in-plane electronic anisotropy. ACS Nano. 2017;11:2219-2226.
Not in our library10.1021/acsnano.6b08704
- 34.
Xia J, et al. Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses. Nanoscale. 2016;8:2063-2070.
Not in our library10.1039/c5nr07675g
- 35.
Li M, et al. Revealing anisotropy and thickness dependence of Raman spectra for SnS flakes. RSC Adv. 2017;7:48759-48765.
Not in our library10.1039/c7ra09430b
- 36.
Song H-Y, Lü J-T. Density functional theory study of inter-layer coupling in bulk tin selenide. Chem. Phys. Lett. 2018;695:200-204.
Not in our library10.1016/j.cplett.2018.02.013
- 37.
Higashitarumizu N, et al. Self-passivated ultra-thin SnS layers via mechanical exfoliation and post-oxidation. Nanoscale. 2018;10:22474-22483.
Not in our library10.1039/c8nr06390g
- 38.
Sutter P, Sutter E. Growth mechanisms of anisotropic layered group IV chalcogenides on van der Waals substrates for energy conversion applications. ACS Appl. Nano Mater. 2018;1:3026-3034.
Not in our library10.1021/acsanm.8b00660
- 39.
Wang SF, Fong WK, Wang W, Surya C. Growth of highly textured SnS on mica using an SnSe buffer layer. Thin Solid Films. 2014;564:206-212.
Not in our library10.1016/j.tsf.2014.06.010
- 40.
Li Y, et al. Probing symmetry properties of few-layer MoS2 and h-BN by optical second-harmonic generation. Nano Lett. 2013;13:3329-3333.
Not in our library10.1021/nl401561r
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