The dualism between adatom- and vacancy-based single crystal growth models
Marcel J. Rost, Leon Jacobse, Marc T. M. Koper
Nature Communications · 2019
doi:10.1038/s41467-019-13188-0 (opens in a new tab)
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Abstract
In homoepitaxial crystal growth, four established modes describe atom deposition on a single crystal surface. Here the authors present a model that shows that, for each adatom growth mode, there exists an analogous but inverse version for vacancy growth. This also applies to combined growth.
Abstract licence: CC BY-NC-ND
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