Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowires
Dapan Li, Changyong Lan, Arumugam Manikandan and 7 more
Nature Communications · 2019
doi:10.1038/s41467-019-09606-y (opens in a new tab)
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Abstract
The application of ternary nanowires (NWs) in optoelectronics has been hindered by difficulties in producing high quality NWs on silicon substrates. Here, the authors report on InxGa1-xSb NWs exhibiting simultaneously high hole mobility, responsivity, and fast response times in the infrared regime.
Abstract licence: CC BY-NC-ND
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