Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors

Abstract

Semiconducting two-dimensional transition metal dichalcogenides are emerging as top candidates for post-silicon electronics. While most of them exhibit isotropic behaviour, lowering the lattice symmetry could induce anisotropic properties, which are both scientifically interesting and potentially useful. Here we present atomically thin rhenium disulfide (ReS 2 ) flakes with unique distorted 1T structure, which exhibit in-plane anisotropic properties. We fabricated monolayer and few-layer ReS 2 field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10 7 ) and low subthreshold swings (100 mV per decade). The observed anisotropic ratio along two principle axes reaches 3.1, which is the highest among all known two-dimensional semiconducting materials. Furthermore, we successfully demonstrated an integrated digital inverter with good performance by utilizing two ReS 2 anisotropic field-effect transistors, suggesting the promising implementation of large-scale two-dimensional logic circuits. Our results underscore the unique properties of two-dimensional semiconducting materials with low crystal symmetry for future electronic applications.

Full text

Its licence does not allow us to show the full text. Read it at PubMed Central:

References 36

1. 1.

   Ferain I., Colinge C. A. & Colinge J. Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors. Nature 479, 310–316 (2011 ).

   Not in our library10.1038/nature10676

2. 2.

   Nair R. R.. Fluorographene: a two-dimensional counterpart of teflon. Small 6, 2877–2884 (2010 ).

   Not in our library10.1002/smll.201001555

3. 3.

   Mak K. F.. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010 ).

   Not in our library10.1103/physrevlett.105.136805

4. 4.

   Wang Q. H.. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012 ).

   Not in our library10.1038/nnano.2012.193

5. 5.

   Li L.. Black phosphorus field-effect transistors. Nat. Nanotechnol. 9, 372–377 (2014 ).

   Not in our library10.1038/nnano.2014.35

6. 6.

   Liu H.. Phosphorene: an unexplored 2D semiconductor with a high hole mobility. ACS Nano 8, 4033–4041 (2014 ).

   Not in our library10.1021/nn501226z

7. 7.

   Radisavljevic B.. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011 ).

   Not in our library10.1038/nnano.2010.279

8. 8.

   Xu M., Liang T., Shi M. & Chen H. Graphene-like two-dimensional materials. Chem. Rev. 113, 3766–3798 (2013 ).

   Not in our library10.1021/cr300263a

9. 9.

   Taniguchi K., Matsumoto A., Shimotani H. & Takagi H. Electric-field-induced superconductivity at 9.4 K in a layered transition metal disulphide MoS2. Appl. Phys. Lett. 101, 042603 (2012 ).

   Not in our library

10. 10.

    Ye J. T.. Superconducting dome in a gate-tuned band insulator. Science 338, 1193–1196 (2012 ).

    Not in our library10.1126/science.1228006

11. 11.

    Sipos B.. From Mott state to superconductivity in 1T-TaS2. Nat. Mater. 7, 960–965 (2008 ).

    Not in our library10.1038/nmat2318

12. 12.

    Shishidou T., Freeman A. J. & Asahi R. Effect of GGA on the half-metallicity of the itinerant ferromagnet CoS2. Phys. Rev. B 64, 180401 (2001 ).

    Not in our library

13. 13.

    Wilson J. A., Disalvo F. J. & Mahajan S. Charge-density waves and superlattices in the metallic layered transition metal dichalcogenides. Adv. Phys. 24, 117–201 (1975 ).

    Not in our library

14. 14.

    Castro Neto A. H. Charge density wave, superconductivity, and anomalous metallic behaviour in 2D transition metal dichalcogenides. Phys. Rev. Lett. 86, 4382–4385 (2001 ).

    Not in our library10.1103/physrevlett.86.4382

15. 15.

    Rossnagel K. On the origin of charge-density waves in select layered transition-metal dichalcogenides. J. Phys. Condens. Matter 23, 213001 (2011 ).

    Not in our library10.1088/0953-8984/23/21/213001

16. 16.

    Ali M. N.. Large, non-saturating magnetoresistance in WTe2. Nature 514, 205–208 (2014 ).

    Not in our library10.1038/nature13763

17. 17.

    Tongay S.. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 5, 3252 (2014 ).

    Not in our library10.1038/ncomms4252

18. 18.

    Feng Y. Q.. Raman vibrational spectra of bulk to monolayer ReS2 with lower symmetry. Preprint at http://arxiv.org/abs/1502.02835 (2015 ).

    Not in our library

19. 19.

    Wolverson D.. Raman spectra of monolayer, few-layer, and bulk ReSe2: an anisotropic layered semiconductor. ACS Nano 8, 11154–11164 (2014 ).

    Not in our library10.1021/nn5053926

20. 20.

    Bao W. Z.. High mobility ambipolar MoS2 field-effect transistors: substrate and dielectric effects. Appl. Phys. Lett. 102, 042104 (2013 ).

    Not in our library

21. 21.

    Kim S.. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nature Commun 3, 1011 (2012 ).

    Not in our library10.1038/ncomms2018

22. 22.

    Yu Z.. Towards intrinsic charge transport in monolayer molybdenum disulfide by defect and interface engineering. Nat. Commun. 5, 5290 (2014 ).

    Not in our library10.1038/ncomms6290

23. 23.

    Krapez J. C., Maldague X. & Cielo P. Thermographic nondestructive evaluation: data inversion procedures. Res. Nondestr. Eval 3, 101–124 (1991 ).

    Not in our library

24. 24.

    Ho C. H., Huang Y. S., Tiong K. K. & Liao P. C. In-plane anisotropy of the optical and electrical properties of layered ReS2 crystals. J. Phys. Condens. Matter 11, 5367 (1999 ).

    Not in our library

25. 25.

    Ho C. H., Huang Y. S. & Tiong K. K. In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals. J. Alloys Compd 317, 222–226 (2001 ).

    Not in our library

26. 26.

    Xia F. N., Wang H. & Jia Y. C. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics. Nat. Commun. 5, 4458 (2014 ).

    Not in our library10.1038/ncomms5458

27. 27.

    Sordan R., Traversi F. & Russo V. Logic gates with a single graphene transistor. Appl. Phys. Lett. 94, 073305 (2009 ).

    Not in our library

28. 28.

    Li S. L.. Low operating bias and matched input-output characteristics in graphene logic inverters. Nano Lett. 10, 2357–2362 (2010 ).

    Not in our library10.1021/nl100031x

29. 29.

    Radisavljevic B., Whitwick M. B. & Kis A. Integrated circuits and logic operations based on single-layer MoS2. ACS Nano 5, 9934–9938 (2011 ).

    Not in our library10.1021/nn203715c

30. 30.

    Wang H.. Integrated circuits based on bilayer MoS2 transistors. Nano Lett. 12, 4674–4680 (2012 ).

    Not in our library10.1021/nl302015v

31. 31.

    Cheng R.. Few-layer molybdenum disulfide transistors and circuits for high-speed flexible electronics. Nat. Commun. 5, 5143–5143 (2014 ).

    Not in our library10.1038/ncomms6143

32. 32.

    Razavi B. Design of Analog CMOS Integrated Circuits Tata McGraw-Hill Education (2002 ).

    Not in our library

33. 33.

    Corbet C. M.. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. ACS Nano 9, 363–370 (2014 ).

    Not in our library10.1021/nn505354a

34. 34.

    Hafner J. & Kresse G. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 47, 558–561 (1993 ).

    Not in our library10.1103/physrevb.47.558

35. 35.

    Kresse G. & Furthmuller J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 54, 11169–11186 (1996 ).

    Not in our library10.1103/physrevb.54.11169

36. 36.

    Perdew J. P., Burke K. & Ernzerhof M. Generalized gradient approximation made simple. Phys. Rev. Lett. 78, 1396–1396 (1997 ).

    Not in our library10.1103/physrevlett.77.3865

Cited by papers we hold 1

• Ultrathin MoO2 nanosheets with good thermal stability and high conductivity · 2017
  Not checked

Reads

A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.