Correction: Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
Ashish V. Penumatcha, Ramon B. Salazar, Joerg Appenzeller
Nature Communications · 2016
doi:10.1038/ncomms11913 (opens in a new tab)
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Abstract
Nature Communications 6: Article number: 8948 (2015); Published: 13 November 2015; Updated: 6 June 2016. This Article contains an error in the penultimate sentence of the penultimate paragraph. This sentence should read: ‘In other words, if one would analyse the minimum current level Imin using a simple parabolic κ(E) WKB approximation, one would extract a much smaller bandgap since Imin is severely underestimated.
Abstract licence: CC BY-NC-ND
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