Structural semiconductor-to-semimetal phase transition in two-dimensional materials induced by electrostatic gating

Abstract

Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin materials that can exist in multiple crystal structures, each with distinct electrical properties. By developing new density functional-based methods, we discover that electrostatic gating device configurations have the potential to drive structural semiconductor-to-semimetal phase transitions in some monolayer transition metal dichalcogenides. Here we show that the semiconductor-to-semimetal phase transition in monolayer MoTe 2 can be driven by a gate voltage of several volts with appropriate choice of dielectric. We find that the transition gate voltage can be reduced arbitrarily by alloying, for example, for Mo x W 1− x Te 2 monolayers. Our findings identify a new physical mechanism, not existing in bulk materials, to dynamically control structural phase transitions in two-dimensional materials, enabling potential applications in phase-change electronic devices.

References 49

1. 1.

   Lencer D. et al. A map for phase-change materials. Nat. Mater. 7, 972–977 (2008 ).

   Not in our library10.1038/nmat2330

2. 2.

   Wong H.-S. P. et al. Phase change memory. Proc. IEEE 98, 2201–2227 (2010 ).

   Not in our library

3. 3.

   Wong H.-S. P. et al. Metal-oxide RRAM. Proc. IEEE 100, 1951–1970 (2012 ).

   Not in our library

4. 4.

   Zhou Y. & Ramanathan S. Correlated electron materials and field effect transistors for logic: a review. Crit. Rev. Solid State Mater. Sci. 38, 286–317 (2013 ).

   Not in our library

5. 5.

   Shu M. J. et al. Ultrafast terahertz-induced response of GeSbTe phase-change materials. Appl. Phys. Lett. 104, 251907 (2014 ).

   Not in our library

6. 6.

   Aetukuri N. B. et al. Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy. Nat. Phys. 9, 661–666 (2013 ).

   Not in our library

7. 7.

   Cavalleri A. et al. Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition. Phys. Rev. Lett. 87, 237401 (2001 ).

   Not in our library10.1103/physrevlett.87.237401

8. 8.

   Kikuzuki T. & Lippmaa M. Characterizing a strain-driven phase transition in VO2. Appl. Phys. Lett. 96, 132107 (2010 ).

   Not in our library

9. 9.

   Wuttig M. & Yamada N. Phase-change materials for rewriteable data storage. Nat. Mater. 6, 824–832 (2007 ).

   Not in our library10.1038/nmat2009

10. 10.

    Lee S.-H., Jung Y. & Agarwal R. Highly scalable non-volatile and ultra-low-power phase-change nanowire memory. Nat. Nanotechnol. 2, 626–630 (2007 ).

    Not in our library10.1038/nnano.2007.291

11. 11.

    Bulaevskiǐ L. N. Structural transitions with formation of charge-density waves in layer compounds. Sov. Phys. Uspekhi 19, 836–843 (1976 ).

    Not in our library

12. 12.

    McMillan W. L. Theory of discommensurations and the commensurate-incommensurate charge-density-wave phase transition. Phys. Rev. B 14, 1496–1502 (1976 ).

    Not in our library

13. 13.

    Thomson R. E., Burk B., Zettl A. & Clarke J. Scanning tunneling microscopy of the charge-density-wave structure in 1T-TaS2. Phys. Rev. B 49, 16899–16916 (1994 ).

    Not in our library10.1103/physrevb.49.16899

14. 14.

    Scruby C. B., Williams P. M. & Parry G. S. The role of charge density waves in structural transformations of 1T TaS2. Philos. Mag. 31, 255–274 (1975 ).

    Not in our library

15. 15.

    Castro Neto A. H. Charge density wave, superconductivity, and anomalous metallic behavior in 2D transition metal dichalcogenides. Phys. Rev. Lett. 86, 4382–4385 (2001 ).

    Not in our library10.1103/physrevlett.86.4382

16. 16.

    Wilson J. A. & Yoffe A. D. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties. Adv. Phys. 18, 193–335 (1969 ).

    Not in our library

17. 17.

    Zhang J., Liu J., Huang J. L., Kim P. & Lieber C. M. Creation of nanocrystals through a solid-solid phase transition induced by an STM tip. Science 274, 757–760 (1996 ).

    Not in our library

18. 18.

    Kim J.-J. et al. Observation of a phase transition from the T phase to the H phase induced by a STM tip in 1T-TaS2. Phys. Rev. B 56, R15573–R15576 (1997 ).

    Not in our library

19. 19.

    Mak K. F., Lee C., Hone J., Shan J. & Heinz T. F. Atomically thin MoS2: a new direct-gap semiconductor. Phys. Rev. Lett. 105, 136805 (2010 ).

    Not in our library10.1103/physrevlett.105.136805

20. 20.

    Duerloo K.-A. N., Li Y. & Reed E. J. Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers. Nat. Commun. 5, 4214 (2014 ).

    Not in our library10.1038/ncomms5214

21. 21.

    Eda G. et al. Coherent atomic and electronic heterostructures of single-layer MoS2. ACS Nano 6, 7311–7317 (2012 ).

    Not in our library10.1021/nn302422x

22. 22.

    Gao G. et al. Charge mediated semiconducting-to-metallic phase transition in molybdenum disulfide monolayer and hydrogen evolution reaction in new 1T′ phase. J. Phys. Chem. C 119, 13124–13128 (2015 ).

    Not in our library

23. 23.

    Kan M. et al. Structures and phase transition of a MoS2 monolayer. J. Phys. Chem. C 118, 1515–1522 (2014 ).

    Not in our library

24. 24.

    Kang Y. et al. Plasmonic hot electron induced structural phase transition in a MoS2 monolayer. Adv. Mater. 26, 6467–6471 (2014 ).

    Not in our library10.1002/adma.201401802

25. 25.

    Jiménez Sandoval S., Yang D., Frindt R. F. & Irwin J. C. Raman study and lattice dynamics of single molecular layers of MoS2. Phys. Rev. B 44, 3955–3962 (1991 ).

    Not in our library10.1103/physrevb.44.3955

26. 26.

    Kan M., Nam H. G., Lee Y. H. & Sun Q. Phase stability and Raman vibration of the molybdenum ditelluride (MoTe2) monolayer. Phys. Chem. Chem. Phys. 17, 14866–14871 (2015 ).

    Not in our library10.1039/c5cp01649e

27. 27.

    Wang Q. H., Kalantar-Zadeh K., Kis A., Coleman J. N. & Strano M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012 ).

    Not in our library10.1038/nnano.2012.193

28. 28.

    Radisavljevic B., Radenovic A., Brivio J., Giacometti V. & Kis A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011 ).

    Not in our library10.1038/nnano.2010.279

29. 29.

    Brown B. E. The crystal structures of WTe2 and high-temperature MoTe2. Acta Crystallogr. 20, 268–274 (1966 ).

    Not in our library

30. 30.

    Keum D. H. et al. Bandgap opening in few-layered monoclinic MoTe2. Nat. Phys. 11, 482–486 (2015 ).

    Not in our library

31. 31.

    Ruppert C., Aslan O. B. & Heinz T. F. Optical properties and band gap of single- and few-layer MoTe2 crystals. Nano Lett. 14, 6231–6236 (2014 ).

    Not in our library10.1021/nl502557g

32. 32.

    Lezama I. G. et al. Indirect-to-direct band gap crossover in few-layer MoTe2. Nano Lett. 15, 2336–2342 (2015 ).

    Not in our library10.1021/nl5045007

33. 33.

    Lin Y.-C., Dumcenco D. O., Huang Y.-S. & Suenaga K. Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2. Nat. Nanotechnol. 9, 391–396 (2014 ).

    Not in our library10.1038/nnano.2014.64

34. 34.

    Ray S. K., Mahapatra R. & Maikap S. High-k gate oxide for silicon heterostructure MOSFET devices. J. Mater. Sci. Mater. Electron 17, 689–710 (2006 ).

    Not in our library

35. 35.

    Kang L. et al. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric. IEEE Electron Device Lett. 21, 181–183 (2000 ).

    Not in our library

36. 36.

    Lee J.-H. et al. Characteristics of ultrathin HfO2 gate dielectrics on strained-Si0.74Ge0.26 layers. Appl. Phys. Lett. 83, 779–781 (2003 ).

    Not in our library

37. 37.

    Wolborski M., Rooth M., Bakowski M. & Hallén A. Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition. J. Appl. Phys. 101, 124105 (2007 ).

    Not in our library

38. 38.

    Shi W. et al. Superconductivity series in transition metal dichalcogenides by ionic gating. Sci. Rep. 5, 12534 (2015 ).

    Not in our library10.1038/srep12534

39. 39.

    Pradhan N. R. et al. Field-effect transistors based on few-layered α-MoTe2. ACS Nano 8, 5911–5920 (2014 ).

    Not in our library10.1021/nn501013c

40. 40.

    Chen Y. et al. Tunable band gap photoluminescence from atomically thin transition-metal dichalcogenide alloys. ACS Nano 7, 4610–4616 (2013 ).

    Not in our library10.1021/nn401420h

Cited by papers we hold 1

• Analyzing the microstructure and related properties of 2D materials by transmission electron microscopy · 2019
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