On fast charged particles scattering in a thin crystalline undulator

The scattering of fast charged particles in a thin silicon crystalline undulator is considered under conditions when all the particles of the beam undergo above-barrier motion with respect to the bent crystalline atomic planes. The consideration is based on the analysis of the particles motion in the continuous potential field of the bent crystal atomic planes and on the simulation of the scattering process taking into account the influence of incoherent effects in scattering on the particles motion. The possibility of manifestation of the effect of multiple volume reflection from the bent crystalline atomic planes both for positively and negatively charged particles is shown. The possibility of the beam profile significant change by means of a crystalline undulator of small size is demonstrated. Keywords: Fast charged particles, Crystalline undulator, Channeling, Particle scattering, Volume reflection

Abstract licence: CC BY

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