Anharmonic decay of phonons in semiconductors from first-principles calculations
Alberto Debernardi, Stefano Baroni, Elisa Molinari
1994
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Abstract
The anharmonic contribution to phonon lifetime and its temperature dependence is calculated from first principle in C, Si and Ge using third-order density-functional perturbation theory. Good agreement with available experimental data is obtained. Different competing two-phonon decay channels are compared and correlated with the density of final states.
Abstract licence: CC0
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