Electrically detected electron spin resonance in a high mobility silicon quantum well
Junya Matsunami, Mitsuaki Ooya, Tohru Okamoto
Physical Review Letters 97, 066602 (2006). · 2006
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Abstract
The resistivity change due to electron spin resonance (ESR) absorption is investigated in a high-mobility two-dimensional electron system formed in a Si/SiGe heterostructure. Results for a specific Landau level configuration demonstrate that the primary cause of the ESR signal is a reduction of the spin polarization, not the effect of electron heating. The longitudinal spin relaxation time T_1 is obtained to be of the order of 1 ms in an in-plane magnetic field of 3.55 T. The suppression of the effect of the Rashba fields due to high-frequency spin precession explains the very long T_1.
Abstract licence: CC0
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