Simulation of Arsenic Diffusion During Rapid Thermal Annealing of Silicon Layers Doped with Low-Energy High-Dose Ion Implantation
O. I. Velichko, A. M. Mironov, V. A. Tsurko and 1 more
2006
We email you when a new notice or a question about this paper appears.
Abstract
The model of transient enhanced diffusion of ion-implanted As is formulated and the finite-difference method for numerical solution of the system of equations obtained is developed. The nonuniform distribution of point defects near the interface and more accurate description of arsenic clustering are simultaneously taking into account. Simulation of As diffusion during rapid annealing gives a reasonable agreement with the experimental data. Keywords: diffusion; clusters; ion implantation; arsenic; silicon PACS: 66.30.Jt
Abstract licence: CC0
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.