Annealing-induced changes of the magnetic anisotropy of (Ga,Mn)As epilayers
V. Stanciu, P. Svedlindh
Appl. Phys. Lett. 87, 242509 (2005) · 2005
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Abstract
The dependence of the magnetic anisotropy of As-capped (Ga,Mn)As epilayers on the annealing parameters - temperature and time - has been investigated. A uniaxial magnetic anisotropy is evidenced, whose orientation with respect to the crystallographic axes changes upon annealing from [-110] for the as-grown samples to [110] for the annealed samples. Both cubic an uniaxial anisotropies are tightly linked to the concentration of charge carriers, the magnitude of which is controlled by the annealing process.
Abstract licence: CC0
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