Charge manipulation and imaging of the Mn acceptor state in GaAs by Cross-sectional Scanning Tunneling Microscopy
A. M. Yakunin, A. Yu. Silov, P. M. Koenraad and 3 more
Superlattices and Microstructures 34, 539-545 (2003) · 2004
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Abstract
An individual Mn acceptor in GaAs is mapped by Cross-sectional Scanning Tunneling Microscopy (X-STM) at room temperature and a strongly anisotropic shape of the acceptor state is observed. An acceptor state manifests itself as a cross-like feature which we attribute to a valence hole weakly bound to the Mn ion forming the (Mn$^{2+}3d^5+hole$) complex. We propose that the observed anisotropy of the Mn acceptor wave-function is due to the d-wave present in the acceptor ground state.
Abstract licence: CC0
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