Interband impact ionization and nonlinear absorption of terahertz radiations in semiconductor heterostructures
J. C. Cao
J. C. Cao, Physical Review Letters 91, 237401 (2003) · 2003
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Abstract
We have theoretically investigated nonlinear free-carrier absorption of terahertz radiation in InAs/AlSb heterojunctions. By considering multiple photon process and conduction-valence interband impact ionization (II), we have determined the field and frequency dependent absorption rate. It is shown that (i) electron-disorder scatterings are important at low to intermediate field, and (ii) most importantly, the high field absorption is dominated by II processes. Our theory can satisfactorily explain a long standing experimental result on the nonlinear absorption in THz regime.
Abstract licence: CC0
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