Alloy effects in GaInN/GaN heterostructures
Duc Phuong Nguyen, Nicolas Regnault, Robson Ferreira and 1 more
Solid State Communications 130 (2004) 751 · 2003
We email you when a new notice or a question about this paper appears.
Abstract
We show that the large band offsets between GaN and InN and the heavy carrier effective masses preclude the use of the Virtual Crystal Approximation to describe the electronic structure of Ga_(1-x)In_(x)N/GaN heterostructures while this approximation works very well for the Ga_(1-x)In_(x)As/GaAs heterostructures.
Abstract licence: CC0
Reads
Read by people on this page
None yet.
Checked or read by AI through naulon
None yet.
A person counts once a day per paper. We keep no cookie and no address: a reader is a hash that changes every day. Any month under five reads shows no number.
Are you an author?
Is this your paper?
Claim it to add your note and be paid when agents cite it. Free.