On the Origin of Schottky Barriers in GaAs(110):Au contacts
T. C. G. Reusch, M. Wenderoth, L. Winking and 2 more
2003
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Abstract
Scanning Tunnelling Spectroscopy of GaAs(110):Au Schottky contacts in cross-sectional configuration has been used to investigate the in-depth properties of the space charge layer as well as the interface region with nanometer resolution.
Abstract licence: CC0
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